Orbital occupancy and hybridization in strained <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mi>SrV</mml:mi><mml:msub><mml:mi mathvariant="normal">O</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:mrow></mml:math> epitaxial films

Oxygen packaging in transition metal oxides determines the metal-oxygen hybridization and electronic occupation at orbitals. Strontium vanadate $(\mathrm{SrV}{\mathrm{O}}_{3})$, having a single electron $3d$ orbital, is thought to be simplest example of strongly correlated metallic oxides. Here, we determine effects epitaxial strain on properties $\mathrm{SrV}{\mathrm{O}}_{3}$ thin films, where metal-oxide sublattice corner connected. Using x-ray absorption linear dichroism $\mathrm{V}\phantom{\rule{0.16em}{0ex}}{L}_{2,3}$ O $K$ edges, it observed that tensile or compressive change hierarchy orbitals within ${t}_{2g}$ ${e}_{g}$ manifolds. Data show remarkable $2p\ensuremath{-}3d$ hybridization, as well strain-induced reordering $\mathrm{V}\phantom{\rule{0.16em}{0ex}}3d({t}_{2g},{e}_{g})$ The latter itself accompanied by consequent modulates hybrid ${\ensuremath{\pi}}^{*}$ ${\ensuremath{\sigma}}^{*}$ carrier population ions, challenging rigid band picture.